TY - JOUR
T1 - The SINFET—A Schottky Injection MOS-Gated Power Transistor
AU - Sin, Johnny K.O.
AU - Salama, C. Andre T.
AU - Hou, Li Zhang
PY - 1986/12
Y1 - 1986/12
N2 - A new MOS-gated power device, the Schottky injection FET (SINFET), is described in this paper. The device offers 6 times higher current handling capability than conventional n-channel power LDMOS transistors of comparable size and voltage capability and still maintains a comparable switching speed. The low on-resistance is obtained by conductivity modulation of the high-resistivity n- drift region using a Schottky injector. Since only a small number of minority carriers are injected, the speed of the device is not degraded substantially and high latchup resistance is achieved. Breakdown voltages and specific on-resistance observed on typical devices are 170 V and 0.01 Ω · cm2, respectively. Gate-turn off times are of the order of 30 ns. Two-dimensional simulation and experimental results comparing the SINFET with the LDMOST and lateral insulated gate transistor (LIGT) are presented.
AB - A new MOS-gated power device, the Schottky injection FET (SINFET), is described in this paper. The device offers 6 times higher current handling capability than conventional n-channel power LDMOS transistors of comparable size and voltage capability and still maintains a comparable switching speed. The low on-resistance is obtained by conductivity modulation of the high-resistivity n- drift region using a Schottky injector. Since only a small number of minority carriers are injected, the speed of the device is not degraded substantially and high latchup resistance is achieved. Breakdown voltages and specific on-resistance observed on typical devices are 170 V and 0.01 Ω · cm2, respectively. Gate-turn off times are of the order of 30 ns. Two-dimensional simulation and experimental results comparing the SINFET with the LDMOST and lateral insulated gate transistor (LIGT) are presented.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1986E797000003
UR - https://www.scopus.com/pages/publications/0022905780
U2 - 10.1109/T-ED.1986.22850
DO - 10.1109/T-ED.1986.22850
M3 - Journal Article
SN - 0018-9383
VL - 33
SP - 1940
EP - 1947
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
ER -