The thermalization of photoexcited hot carriers in InxGa1-xAs GaAs strained single quantum well structures

Zhongying Xu; Weikun Ge; Jizong Xu; Yuzhang Li; Baozhen Zheng; T. G. Andersson; Z. G. Chen

doi:10.1016/0749-6036(90)90107-I

The thermalization of photoexcited hot carriers in In_xGa_1-xAs GaAs strained single quantum well structures

Zhongying Xu^*, Weikun Ge, Jizong Xu, Yuzhang Li, Baozhen Zheng, T. G. Andersson, Z. G. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Both hot carrier photoluminescence and picosecond time-resolved luminescence demonstrate that photoinduced carrier relaxation processes in In_xGa_1-xAs GaAs strained single quantum well structures are significantly slower than in the bulk and depend on the alloy composition of the In_xGa_1-xAs. These results are interpreted in terms of strain induced confinement of the LO-phonon as a possible source of the reduced electron-phonon interaction.

Original language	English
Pages (from-to)	13-16
Number of pages	4
Journal	Superlattices and Microstructures
Volume	7
Issue number	1
DOIs	https://doi.org/10.1016/0749-6036(90)90107-I
Publication status	Published - 1990
Externally published	Yes

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10.1016/0749-6036(90)90107-I

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title = "The thermalization of photoexcited hot carriers in InxGa1-xAs GaAs strained single quantum well structures",

abstract = "Both hot carrier photoluminescence and picosecond time-resolved luminescence demonstrate that photoinduced carrier relaxation processes in InxGa1-xAs GaAs strained single quantum well structures are significantly slower than in the bulk and depend on the alloy composition of the InxGa1-xAs. These results are interpreted in terms of strain induced confinement of the LO-phonon as a possible source of the reduced electron-phonon interaction.",

author = "Zhongying Xu and Weikun Ge and Jizong Xu and Yuzhang Li and Baozhen Zheng and Andersson, \{T. G.\} and Chen, \{Z. G.\}",

year = "1990",

doi = "10.1016/0749-6036(90)90107-I",

language = "English",

volume = "7",

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journal = "Superlattices and Microstructures",

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TY - JOUR

T1 - The thermalization of photoexcited hot carriers in InxGa1-xAs GaAs strained single quantum well structures

AU - Xu, Zhongying

AU - Ge, Weikun

AU - Xu, Jizong

AU - Li, Yuzhang

AU - Zheng, Baozhen

AU - Andersson, T. G.

AU - Chen, Z. G.

PY - 1990

Y1 - 1990

N2 - Both hot carrier photoluminescence and picosecond time-resolved luminescence demonstrate that photoinduced carrier relaxation processes in InxGa1-xAs GaAs strained single quantum well structures are significantly slower than in the bulk and depend on the alloy composition of the InxGa1-xAs. These results are interpreted in terms of strain induced confinement of the LO-phonon as a possible source of the reduced electron-phonon interaction.

AB - Both hot carrier photoluminescence and picosecond time-resolved luminescence demonstrate that photoinduced carrier relaxation processes in InxGa1-xAs GaAs strained single quantum well structures are significantly slower than in the bulk and depend on the alloy composition of the InxGa1-xAs. These results are interpreted in terms of strain induced confinement of the LO-phonon as a possible source of the reduced electron-phonon interaction.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1990CN35900003

UR - https://www.scopus.com/pages/publications/0025254823

U2 - 10.1016/0749-6036(90)90107-I

DO - 10.1016/0749-6036(90)90107-I

M3 - Journal Article

AN - SCOPUS:0025254823

SN - 0749-6036

VL - 7

SP - 13

EP - 16

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

The thermalization of photoexcited hot carriers in In_xGa_1-xAs GaAs strained single quantum well structures

Abstract

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