Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

M. C. Poon; F. Deng; H. Wong; M. Wong; J. K.O. Sin; S. S. Lau; C. H. Ho; P. G. Han

Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

M. C. Poon^*, F. Deng, H. Wong, M. Wong, J. K.O. Sin, S. S. Lau, C. H. Ho, P. G. Han

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to conference › Conference Paper › peer-review

3 Citations (Scopus)

Abstract

CoSi₂ is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi₂ are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi₂ is a better silicide material for amorphous Si device applications.

Original language	English
Pages	65-68
Number of pages	4
Publication status	Published - 1997
Event	Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: 30 Aug 1997 → 30 Aug 1997

Conference

Conference	Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting
City	Hong Kong, Hong Kong
Period	30/08/97 → 30/08/97

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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@conference{b7200590feca44c6abd14063a4f335ba,

title = "Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon",

abstract = "CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.",

author = "Poon, \{M. C.\} and F. Deng and H. Wong and M. Wong and Sin, \{J. K.O.\} and Lau, \{S. S.\} and Ho, \{C. H.\} and Han, \{P. G.\}",

year = "1997",

language = "English",

pages = "65--68",

note = "Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting ; Conference date: 30-08-1997 Through 30-08-1997",

}

TY - CONF

T1 - Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

AU - Poon, M. C.

AU - Deng, F.

AU - Wong, H.

AU - Wong, M.

AU - Sin, J. K.O.

AU - Lau, S. S.

AU - Ho, C. H.

AU - Han, P. G.

PY - 1997

Y1 - 1997

N2 - CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.

AB - CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.

UR - https://www.scopus.com/pages/publications/0031365740

M3 - Conference Paper

AN - SCOPUS:0031365740

SP - 65

EP - 68

T2 - Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 August 1997 through 30 August 1997

ER -

Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

Abstract

Conference

UN SDGs

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