Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

Shu Yang; Shenghou Liu; Cheng Liu; Zhikai Tang; Yunyou Lu; Kevin J. Chen

doi:10.1109/IEDM.2014.7047069

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

Shu Yang, Shenghou Liu, Cheng Liu, Zhikai Tang, Yunyou Lu, Kevin J. Chen

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

26 Citations (Scopus)

Abstract

The mechanisms of divergent V_TH-thermal-stabilities of III-nitride (III-N) MIS-HEMT and MOS-Channel-HEMT are revealed in this work. The more significant V_TH-thermal-instability of MIS-HEMT is attributed to the polarized III-N barrier layer that spatially separates the critical gate-dielectric/III-N interface from the channel and allows "deeper" interface trap levels emerging above the Fermi level at pinch-off. We also reveal the influences of the barrier layer's thickness and the fixed charges (e.g. F^-) in the barrier layer on V_TH-thermal-stability and attempt to provide guidelines for the optimization of insulated-gate III-N power switching devices. A tailor-made normally-off MIS-HEMT with optimal tradeoff between performance and stability is thereby demonstrated, by conjunctively utilizing partially recessed gate and fluorine plasma implantation techniques.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	17.2.1-17.2.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047069
Publication status	Published - 20 Feb 2015
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 15 Dec 2014 → 17 Dec 2014

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Conference

Conference	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	15/12/14 → 17/12/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

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Yang, S., Liu, S., Liu, C., Tang, Z., Lu, Y., & Chen, K. J. (2015). Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 17.2.1-17.2.4). Article 7047069 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047069

Yang, Shu ; Liu, Shenghou ; Liu, Cheng et al. / Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs : Underlying mechanisms and optimization schemes. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 17.2.1-17.2.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

@inproceedings{b2cfc85494114663a3637fb0f100b775,

title = "Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes",

abstract = "The mechanisms of divergent VTH-thermal-stabilities of III-nitride (III-N) MIS-HEMT and MOS-Channel-HEMT are revealed in this work. The more significant VTH-thermal-instability of MIS-HEMT is attributed to the polarized III-N barrier layer that spatially separates the critical gate-dielectric/III-N interface from the channel and allows {"}deeper{"} interface trap levels emerging above the Fermi level at pinch-off. We also reveal the influences of the barrier layer's thickness and the fixed charges (e.g. F-) in the barrier layer on VTH-thermal-stability and attempt to provide guidelines for the optimization of insulated-gate III-N power switching devices. A tailor-made normally-off MIS-HEMT with optimal tradeoff between performance and stability is thereby demonstrated, by conjunctively utilizing partially recessed gate and fluorine plasma implantation techniques.",

author = "Shu Yang and Shenghou Liu and Cheng Liu and Zhikai Tang and Yunyou Lu and Chen, \{Kevin J.\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

year = "2015",

month = feb,

day = "20",

doi = "10.1109/IEDM.2014.7047069",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "February",

pages = "17.2.1--17.2.4",

booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",

edition = "February",

}

Yang, S, Liu, S, Liu, C, Tang, Z, Lu, Y & Chen, KJ 2015, Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047069, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 17.2.1-17.2.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 15/12/14. https://doi.org/10.1109/IEDM.2014.7047069

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes. / Yang, Shu; Liu, Shenghou; Liu, Cheng et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 17.2.1-17.2.4 7047069 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

AU - Yang, Shu

AU - Liu, Shenghou

AU - Liu, Cheng

AU - Tang, Zhikai

AU - Lu, Yunyou

AU - Chen, Kevin J.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - The mechanisms of divergent VTH-thermal-stabilities of III-nitride (III-N) MIS-HEMT and MOS-Channel-HEMT are revealed in this work. The more significant VTH-thermal-instability of MIS-HEMT is attributed to the polarized III-N barrier layer that spatially separates the critical gate-dielectric/III-N interface from the channel and allows "deeper" interface trap levels emerging above the Fermi level at pinch-off. We also reveal the influences of the barrier layer's thickness and the fixed charges (e.g. F-) in the barrier layer on VTH-thermal-stability and attempt to provide guidelines for the optimization of insulated-gate III-N power switching devices. A tailor-made normally-off MIS-HEMT with optimal tradeoff between performance and stability is thereby demonstrated, by conjunctively utilizing partially recessed gate and fluorine plasma implantation techniques.

AB - The mechanisms of divergent VTH-thermal-stabilities of III-nitride (III-N) MIS-HEMT and MOS-Channel-HEMT are revealed in this work. The more significant VTH-thermal-instability of MIS-HEMT is attributed to the polarized III-N barrier layer that spatially separates the critical gate-dielectric/III-N interface from the channel and allows "deeper" interface trap levels emerging above the Fermi level at pinch-off. We also reveal the influences of the barrier layer's thickness and the fixed charges (e.g. F-) in the barrier layer on VTH-thermal-stability and attempt to provide guidelines for the optimization of insulated-gate III-N power switching devices. A tailor-made normally-off MIS-HEMT with optimal tradeoff between performance and stability is thereby demonstrated, by conjunctively utilizing partially recessed gate and fluorine plasma implantation techniques.

UR - https://openalex.org/W1981421833

U2 - 10.1109/IEDM.2014.7047069

DO - 10.1109/IEDM.2014.7047069

M3 - Conference Paper published in a book

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 17.2.1-17.2.4

BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 15 December 2014 through 17 December 2014

ER -

Yang S, Liu S, Liu C, Tang Z, Lu Y, Chen KJ. Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 17.2.1-17.2.4. 7047069. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047069

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

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