TY - JOUR
T1 - Thermoelectric cool-film shear stress sensor
AU - Oiler, Jonathon
AU - Tang, Rui
AU - Ma, Teng
AU - Yu, Hongyu
PY - 2014/7
Y1 - 2014/7
N2 - Hot-wire anemometers, being a robust and highly sensitive method for measuring flow properties, can be limited in sensitivity where locally increasing the temperature may induce measurement inaccuracy such as when used in near-boiling fluids. In this environment, locally decreasing the temperature allows for a larger temperature difference between the sensor and the ambient environment, thereby increasing device sensitivity while maintaining single-phase convection heat transfer physics. In this letter, we present the new capability of using thermoelectrically cooled sensors to measure wall shear stress. The power required to maintain a constant sensor temperature was increased as the wall shear stress in the channel was increased, providing proof of concept.
AB - Hot-wire anemometers, being a robust and highly sensitive method for measuring flow properties, can be limited in sensitivity where locally increasing the temperature may induce measurement inaccuracy such as when used in near-boiling fluids. In this environment, locally decreasing the temperature allows for a larger temperature difference between the sensor and the ambient environment, thereby increasing device sensitivity while maintaining single-phase convection heat transfer physics. In this letter, we present the new capability of using thermoelectrically cooled sensors to measure wall shear stress. The power required to maintain a constant sensor temperature was increased as the wall shear stress in the channel was increased, providing proof of concept.
KW - Shear stress sensor
KW - flow sensor
KW - thermoelectrics
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000338662100032
UR - https://openalex.org/W2199213306
UR - https://www.scopus.com/pages/publications/84903696511
U2 - 10.1109/LED.2014.2320976
DO - 10.1109/LED.2014.2320976
M3 - Journal Article
SN - 0741-3106
VL - 35
SP - 783
EP - 785
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 7
M1 - 6814781
ER -