Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

S. Cho; A. DiVenere; G. K. Wong; J. B. Ketterson; J. R. Meyer; C. A. Hoffman

doi:10.1016/S0038-1098(97)00063-X

Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

S. Cho^*, A. DiVenere, G. K. Wong, J. B. Ketterson, J. R. Meyer, C. A. Hoffman

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

27 Citations (Scopus)

Abstract

We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 Å Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.

Original language	English
Pages (from-to)	673-676
Number of pages	4
Journal	Solid State Communications
Volume	102
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1098(97)00063-X
Publication status	Published - Jun 1997
Externally published	Yes

Access to Document

10.1016/S0038-1098(97)00063-X

Cite this

@article{682ee7cff3f24c6793807ba3dad90641,

title = "Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates",

abstract = "We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 {\AA} Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {\AA} and 800 {\AA} Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.",

author = "S. Cho and A. DiVenere and Wong, \{G. K.\} and Ketterson, \{J. B.\} and Meyer, \{J. R.\} and Hoffman, \{C. A.\}",

year = "1997",

month = jun,

doi = "10.1016/S0038-1098(97)00063-X",

language = "English",

volume = "102",

pages = "673--676",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

AU - Cho, S.

AU - DiVenere, A.

AU - Wong, G. K.

AU - Ketterson, J. B.

AU - Meyer, J. R.

AU - Hoffman, C. A.

PY - 1997/6

Y1 - 1997/6

N2 - We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 Å Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.

AB - We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 Å Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.

UR - http://www.scopus.com/inward/record.url?scp=0031169066&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(97)00063-X

DO - 10.1016/S0038-1098(97)00063-X

M3 - Journal Article

AN - SCOPUS:0031169066

SN - 0038-1098

VL - 102

SP - 673

EP - 676

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this