Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization

Man Wong; Zhiguo Meng; Dongli Zhang

doi:10.1109/LEOS.2005.1548309

Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization

Man Wong^*, Zhiguo Meng, Dongli Zhang

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Original language	English
Title of host publication	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	932-933
Number of pages	2
ISBN (Print)	0780392175, 9780780392175
DOIs	https://doi.org/10.1109/LEOS.2005.1548309
Publication status	Published - 2005
Event	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia Duration: 22 Oct 2005 → 28 Oct 2005

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2005
ISSN (Print)	1092-8081

Conference

Conference	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Country/Territory	Australia
City	Sydney
Period	22/10/05 → 28/10/05

Access to Document

10.1109/LEOS.2005.1548309

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Wong, M., Meng, Z., & Zhang, D. (2005). Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (pp. 932-933). Article 1548309 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LEOS.2005.1548309

Wong, Man ; Meng, Zhiguo ; Zhang, Dongli. / Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization. 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 932-933 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

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title = "Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization",

author = "Man Wong and Zhiguo Meng and Dongli Zhang",

year = "2005",

doi = "10.1109/LEOS.2005.1548309",

language = "English",

isbn = "0780392175",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "932--933",

booktitle = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005",

note = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 ; Conference date: 22-10-2005 Through 28-10-2005",

}

Wong, M, Meng, Z & Zhang, D 2005, Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization. in 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005., 1548309, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2005, Institute of Electrical and Electronics Engineers Inc., pp. 932-933, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, Australia, 22/10/05. https://doi.org/10.1109/LEOS.2005.1548309

Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization. / Wong, Man; Meng, Zhiguo; Zhang, Dongli.
18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc., 2005. p. 932-933 1548309 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization

AU - Wong, Man

AU - Meng, Zhiguo

AU - Zhang, Dongli

PY - 2005

Y1 - 2005

UR - https://openalex.org/W1548048444

UR - https://www.scopus.com/pages/publications/33751318705

U2 - 10.1109/LEOS.2005.1548309

DO - 10.1109/LEOS.2005.1548309

M3 - Conference Paper published in a book

SN - 0780392175

SN - 9780780392175

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SP - 932

EP - 933

BT - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

Y2 - 22 October 2005 through 28 October 2005

ER -

Wong M, Meng Z, Zhang D. Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc. 2005. p. 932-933. 1548309. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1109/LEOS.2005.1548309

Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization

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