Top-gate thin film transistor with ZnO:N channel fabricated by room temperature RF magnetron sputtering

Meng Zhang; Wei Zhou; Rongsheng Chen; Man Wong; Hoi Sing Kwok

doi:10.1002/j.2168-0159.2014.tb00266.x

Top-gate thin film transistor with ZnO:N channel fabricated by room temperature RF magnetron sputtering

Meng Zhang, Wei Zhou, Rongsheng Chen, Man Wong, Hoi Sing Kwok

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

In this work, top-gate thin film transistor (TFT) with ZnO doped nitrogen (ZnO:N) channel fabricated by room temperature rf magnetron sputtering is demonstrated. ZnO:N film is obtained by introducing N₂ ambient when sputtering ZnO. The crystallization of ZnO:N is better compared to ZnO film. The test results indicate that the ZnO:N could improve the electrical characteristics as an active channel layer for a TFT device. This in-process doping method may be a valuable technique for the fabrication of the practical and stable TFT devices.

Original language	English
Pages (from-to)	1024-1027
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2014.tb00266.x
Publication status	Published - Jun 2014

Keywords

ZnO
ZnO:N
room temperature sputtering
thin film transistor

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10.1002/j.2168-0159.2014.tb00266.x

Cite this

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title = "Top-gate thin film transistor with ZnO:N channel fabricated by room temperature RF magnetron sputtering",

abstract = "In this work, top-gate thin film transistor (TFT) with ZnO doped nitrogen (ZnO:N) channel fabricated by room temperature rf magnetron sputtering is demonstrated. ZnO:N film is obtained by introducing N2 ambient when sputtering ZnO. The crystallization of ZnO:N is better compared to ZnO film. The test results indicate that the ZnO:N could improve the electrical characteristics as an active channel layer for a TFT device. This in-process doping method may be a valuable technique for the fabrication of the practical and stable TFT devices.",

keywords = "ZnO, ZnO:N, room temperature sputtering, thin film transistor",

author = "Meng Zhang and Wei Zhou and Rongsheng Chen and Man Wong and Kwok, \{Hoi Sing\}",

year = "2014",

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language = "English",

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pages = "1024--1027",

journal = "Digest of Technical Papers - SID International Symposium",

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TY - JOUR

T1 - Top-gate thin film transistor with ZnO:N channel fabricated by room temperature RF magnetron sputtering

AU - Zhang, Meng

AU - Zhou, Wei

AU - Chen, Rongsheng

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2014/6

Y1 - 2014/6

N2 - In this work, top-gate thin film transistor (TFT) with ZnO doped nitrogen (ZnO:N) channel fabricated by room temperature rf magnetron sputtering is demonstrated. ZnO:N film is obtained by introducing N2 ambient when sputtering ZnO. The crystallization of ZnO:N is better compared to ZnO film. The test results indicate that the ZnO:N could improve the electrical characteristics as an active channel layer for a TFT device. This in-process doping method may be a valuable technique for the fabrication of the practical and stable TFT devices.

AB - In this work, top-gate thin film transistor (TFT) with ZnO doped nitrogen (ZnO:N) channel fabricated by room temperature rf magnetron sputtering is demonstrated. ZnO:N film is obtained by introducing N2 ambient when sputtering ZnO. The crystallization of ZnO:N is better compared to ZnO film. The test results indicate that the ZnO:N could improve the electrical characteristics as an active channel layer for a TFT device. This in-process doping method may be a valuable technique for the fabrication of the practical and stable TFT devices.

KW - ZnO

KW - ZnO:N

KW - room temperature sputtering

KW - thin film transistor

UR - https://openalex.org/W2073808595

UR - https://www.scopus.com/pages/publications/84904970979

U2 - 10.1002/j.2168-0159.2014.tb00266.x

DO - 10.1002/j.2168-0159.2014.tb00266.x

M3 - Journal Article

SN - 0097-966X

VL - 45

SP - 1024

EP - 1027

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

ER -

Top-gate thin film transistor with ZnO:N channel fabricated by room temperature RF magnetron sputtering

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Keywords

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