Towards data reliable crossbar-based memristive memories

Amirali Ghofrani, Miguel Angel Lastras-Montano, Kwang Ting Cheng

Research output: Chapter in Book/Conference Proceeding/ReportConference Paper published in a bookpeer-review

Abstract

A series of breakthroughs in memristive devices have demonstrated the potential of using crossbar-based memristor arrays as ultra-high-density and low-power memory. However, their unique device characteristics could cause data disturbance for both read and write operations resulting in serious data reliability problems. This paper discusses such reliability issues in detail and proposes a comprehensive yet low area-/performance-/energy-overhead solution addressing these problems. The proposed solution applies asymmetric voltages for disturbance confinement, inserts redundancy for disturbance detection, and employs a refreshing mechanism to restore weakened data. The results of a case study show that the average overheads of area, performance and energy consumption for achieving data reliability, over a baseline unreliable memory system, are 3%, 4%, and 19% respectively.

Original languageEnglish
Title of host publicationProceedings - 2013 IEEE International Test Conference, ITC 2013
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event44th IEEE International Test Conference, ITC 2013 - Anaheim, CA, United States
Duration: 10 Sept 201312 Sept 2013

Publication series

NameProceedings - International Test Conference
ISSN (Print)1089-3539

Conference

Conference44th IEEE International Test Conference, ITC 2013
Country/TerritoryUnited States
CityAnaheim, CA
Period10/09/1312/09/13

Keywords

  • Crossbar
  • Memristor
  • Nonvolatile
  • ReRAM
  • Reliability

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