Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering

Zhaoying Chen; Jingyang Sui; Xinqiang Wang; Kumsong Kim; Ding Wang; Ping Wang; Tao Wang; Xin Rong; Hiroshi Harima; Akihiko Yoshikawa; Weikun Ge; Bo Shen

doi:10.1016/j.spmi.2018.06.026

Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering

Zhaoying Chen
, Jingyang Sui
, Xinqiang Wang^*
, Kumsong Kim
, Ding Wang
, Ping Wang
, Tao Wang
, Xin Rong
, Hiroshi Harima
, Akihiko Yoshikawa
, Weikun Ge
, Bo Shen

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 × 10¹⁶ to 4 × 10²¹ cm⁻³. Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mg_i and Mg_In-N-In_i are the dominant sites of Mg dopants at [Mg] < 1.8 × 10²⁰ cm⁻³, while the complex of Mg_In-N-Mg_i dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.

Original language	English
Pages (from-to)	533-539
Number of pages	7
Journal	Superlattices and Microstructures
Volume	120
DOIs	https://doi.org/10.1016/j.spmi.2018.06.026
Publication status	Published - Aug 2018

Bibliographical note

Publisher Copyright:
© 2018

Keywords

Local vibrational modes
Mg-doped InN
Molecular beam epitaxy
Raman scattering

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10.1016/j.spmi.2018.06.026

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@article{29689b5179f04304bcb293b030d01b99,

title = "Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering",

abstract = "The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 × 1016 to 4 × 1021 cm−3. Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mgi and MgIn-N-Ini are the dominant sites of Mg dopants at [Mg] < 1.8 × 1020 cm−3, while the complex of MgIn-N-Mgi dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.",

keywords = "Local vibrational modes, Mg-doped InN, Molecular beam epitaxy, Raman scattering",

author = "Zhaoying Chen and Jingyang Sui and Xinqiang Wang and Kumsong Kim and Ding Wang and Ping Wang and Tao Wang and Xin Rong and Hiroshi Harima and Akihiko Yoshikawa and Weikun Ge and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2018",

year = "2018",

month = aug,

doi = "10.1016/j.spmi.2018.06.026",

language = "English",

volume = "120",

pages = "533--539",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering

AU - Chen, Zhaoying

AU - Sui, Jingyang

AU - Wang, Xinqiang

AU - Kim, Kumsong

AU - Wang, Ding

AU - Wang, Ping

AU - Wang, Tao

AU - Rong, Xin

AU - Harima, Hiroshi

AU - Yoshikawa, Akihiko

AU - Ge, Weikun

AU - Shen, Bo

PY - 2018/8

Y1 - 2018/8

N2 - The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 × 1016 to 4 × 1021 cm−3. Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mgi and MgIn-N-Ini are the dominant sites of Mg dopants at [Mg] < 1.8 × 1020 cm−3, while the complex of MgIn-N-Mgi dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.

AB - The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 × 1016 to 4 × 1021 cm−3. Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mgi and MgIn-N-Ini are the dominant sites of Mg dopants at [Mg] < 1.8 × 1020 cm−3, while the complex of MgIn-N-Mgi dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.

KW - Local vibrational modes

KW - Mg-doped InN

KW - Molecular beam epitaxy

KW - Raman scattering

UR - https://openalex.org/W2808495048

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000445713700068

UR - https://www.scopus.com/pages/publications/85049304423

U2 - 10.1016/j.spmi.2018.06.026

DO - 10.1016/j.spmi.2018.06.026

M3 - Journal Article

AN - SCOPUS:85049304423

SN - 0749-6036

VL - 120

SP - 533

EP - 539

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering

Abstract

Bibliographical note

Keywords

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