Abstract
Transparent basic logic circuits integrated by indium tin oxide(ITO)-stabilized ZnO thin film transistors(TFTs) are successfully fabricated on glass substrate. ITO-stabilized ZnO thin films with hybrid-phase microstructure are employed as active layers in the bottom-contact top-gated TFTs. We fabricate 13-stages ring oscillator (RO) with diode-load and pseudo-CMOS inverter respectively in order to tell the difference between those two schemes. The pseudo-CMOS RO exhibits 7V voltage swing and 42kHz oscillation frequency while the diode-load RO exhibiting 3.3V and 71kHz under the same supply voltage of 20V. Meanwhile, basic digital circuits like NOR gates and D flip flops with pseudo-CMOS scheme are also fabricated and they are logically correct. Those logic gates exhibit a typical high level of 4.3V, low level of 200mV and maximum operating frequency of nearly 10kHz under the 10V supply voltage. The transmittance of the chip is 80% to 90% in a 380-nm to 800-nm wavelength.
| Original language | English |
|---|---|
| Pages (from-to) | 322-325 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 49 |
| Issue number | S1 |
| DOIs | |
| Publication status | Published - 2018 |
| Event | International Conference on Display Technology, ICDT 2018 - Guangzhou, China Duration: 9 Apr 2018 → 12 Apr 2018 |
Bibliographical note
Publisher Copyright:© 2018 SID.
Keywords
- ITO-Stabilized ZnO
- Thin Film Transistor(TFT)
- Transparent Basic Logic Circuits