Tunneling field effect transistor technology

Lining Zhang; Mansun Chan

doi:10.1007/978-3-319-31653-6

Tunneling field effect transistor technology

Lining Zhang
, Mansun Chan

Department of Electronic and Computer Engineering

Research output: Book/Report › Book › peer-review

28 Citations (Scopus)

Abstract

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Original language	English
Publisher	Springer International Publishing
Number of pages	213
ISBN (Electronic)	9783319316536
ISBN (Print)	9783319316512
DOIs	https://doi.org/10.1007/978-3-319-31653-6
Publication status	Published - 1 Jan 2016

Bibliographical note

Publisher Copyright:
© Springer International Publishing Switzerland 2016.

Access to Document

10.1007/978-3-319-31653-6

Cite this

@book{c47e4e6e4cd949b08a6f71e5930ac687,

title = "Tunneling field effect transistor technology",

abstract = "This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.",

author = "Lining Zhang and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} Springer International Publishing Switzerland 2016.",

year = "2016",

month = jan,

day = "1",

doi = "10.1007/978-3-319-31653-6",

language = "English",

isbn = "9783319316512",

publisher = "Springer International Publishing",

}

TY - BOOK

T1 - Tunneling field effect transistor technology

AU - Zhang, Lining

AU - Chan, Mansun

PY - 2016/1/1

Y1 - 2016/1/1

N2 - This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

AB - This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

UR - https://openalex.org/W2502449204

U2 - 10.1007/978-3-319-31653-6

DO - 10.1007/978-3-319-31653-6

M3 - Book

SN - 9783319316512

BT - Tunneling field effect transistor technology

PB - Springer International Publishing

ER -

Tunneling field effect transistor technology

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this