UIS analysis and characterization of the inverted L-shaped source trench power MOSFET

Jacky C.W. Ng; Johnny K.O. Sin; Hitoshi Sumida; Yoshiaki Toyoda; Akihiko Ohi; Hiroyuki Tanaka; Takeyoshi Nishimura; Katsunori Ueno

doi:10.1109/TED.2011.2164081

UIS analysis and characterization of the inverted L-shaped source trench power MOSFET

Jacky C.W. Ng^*
, Johnny K.O. Sin
, Hitoshi Sumida
, Yoshiaki Toyoda
, Akihiko Ohi
, Hiroyuki Tanaka
, Takeyoshi Nishimura
, Katsunori Ueno

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

16 Citations (Scopus)

Abstract

In this paper, the unclamped inductive switching (UIS) behavior of an inverted L-shaped source trench power MOSFET is numerically analyzed and experimentally characterized. The measured avalanche energy absorption at UIS of the new trench power MOSFET is 2.1 times that of the conventional trench power MOSFET. This is explained by numerical simulation, which shows that the voltage drop across the emitter/base junction in the parasitic bipolar junction transistor of the new structure is smaller than that of the conventional structure. The influence of structural and device size variation of the new trench power MOSFET on UIS performance is also investigated. Results show that the avalanche current density at UIS is a strong function of the p ⁺-region width and the device size. Furthermore, the effect becomes very significant as the device size becomes very small.

Original language	English
Article number	6016231
Pages (from-to)	3984-3990
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	11
DOIs	https://doi.org/10.1109/TED.2011.2164081
Publication status	Published - Nov 2011

Keywords

Avalanche current
avalanche ruggedness
energy absorption
trench power MOSFET
unclamped inductive switching (UIS)

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10.1109/TED.2011.2164081

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title = "UIS analysis and characterization of the inverted L-shaped source trench power MOSFET",

abstract = "In this paper, the unclamped inductive switching (UIS) behavior of an inverted L-shaped source trench power MOSFET is numerically analyzed and experimentally characterized. The measured avalanche energy absorption at UIS of the new trench power MOSFET is 2.1 times that of the conventional trench power MOSFET. This is explained by numerical simulation, which shows that the voltage drop across the emitter/base junction in the parasitic bipolar junction transistor of the new structure is smaller than that of the conventional structure. The influence of structural and device size variation of the new trench power MOSFET on UIS performance is also investigated. Results show that the avalanche current density at UIS is a strong function of the p +-region width and the device size. Furthermore, the effect becomes very significant as the device size becomes very small.",

keywords = "Avalanche current, avalanche ruggedness, energy absorption, trench power MOSFET, unclamped inductive switching (UIS)",

author = "Ng, \{Jacky C.W.\} and Sin, \{Johnny K.O.\} and Hitoshi Sumida and Yoshiaki Toyoda and Akihiko Ohi and Hiroyuki Tanaka and Takeyoshi Nishimura and Katsunori Ueno",

year = "2011",

month = nov,

doi = "10.1109/TED.2011.2164081",

language = "English",

volume = "58",

pages = "3984--3990",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - UIS analysis and characterization of the inverted L-shaped source trench power MOSFET

AU - Ng, Jacky C.W.

AU - Sin, Johnny K.O.

AU - Sumida, Hitoshi

AU - Toyoda, Yoshiaki

AU - Ohi, Akihiko

AU - Tanaka, Hiroyuki

AU - Nishimura, Takeyoshi

AU - Ueno, Katsunori

PY - 2011/11

Y1 - 2011/11

N2 - In this paper, the unclamped inductive switching (UIS) behavior of an inverted L-shaped source trench power MOSFET is numerically analyzed and experimentally characterized. The measured avalanche energy absorption at UIS of the new trench power MOSFET is 2.1 times that of the conventional trench power MOSFET. This is explained by numerical simulation, which shows that the voltage drop across the emitter/base junction in the parasitic bipolar junction transistor of the new structure is smaller than that of the conventional structure. The influence of structural and device size variation of the new trench power MOSFET on UIS performance is also investigated. Results show that the avalanche current density at UIS is a strong function of the p +-region width and the device size. Furthermore, the effect becomes very significant as the device size becomes very small.

AB - In this paper, the unclamped inductive switching (UIS) behavior of an inverted L-shaped source trench power MOSFET is numerically analyzed and experimentally characterized. The measured avalanche energy absorption at UIS of the new trench power MOSFET is 2.1 times that of the conventional trench power MOSFET. This is explained by numerical simulation, which shows that the voltage drop across the emitter/base junction in the parasitic bipolar junction transistor of the new structure is smaller than that of the conventional structure. The influence of structural and device size variation of the new trench power MOSFET on UIS performance is also investigated. Results show that the avalanche current density at UIS is a strong function of the p +-region width and the device size. Furthermore, the effect becomes very significant as the device size becomes very small.

KW - Avalanche current

KW - avalanche ruggedness

KW - energy absorption

KW - trench power MOSFET

KW - unclamped inductive switching (UIS)

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000296099400044

UR - https://openalex.org/W2151917522

U2 - 10.1109/TED.2011.2164081

DO - 10.1109/TED.2011.2164081

M3 - Journal Article

SN - 0018-9383

VL - 58

SP - 3984

EP - 3990

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 6016231

ER -

UIS analysis and characterization of the inverted L-shaped source trench power MOSFET

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Keywords

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