UIS analysis and characterization of the SONOS gate power MOSFET

Xianda Zhou; Jacky C.W. Ng; Johnny K.O. Sin

doi:10.1109/TED.2011.2174641

UIS analysis and characterization of the SONOS gate power MOSFET

Xianda Zhou^*, Jacky C.W. Ng, Johnny K.O. Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

3 Citations (Scopus)

Abstract

In this paper, unclamped inductive switching (UIS) performance of the novel silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) is analyzed. The avalanche energy absorption of the SG-MOSFET at UIS is 5.2 times that of the conventional power MOSFET. Analysis shows that the improvement is due to the heavily doped p-body used in the device. Moreover, the influence of the structural parameters on the UIS performance of the device is experimentally characterized. Measurement results show that the UIS performance is not sensitive to the p ⁺ contact width and slightly degrades with a larger gate length. Furthermore, the results show that it is promising to further improve the UIS performance of the device by using a more efficient charge trapping material in the gate dielectric to allow further increase in the p-body doping concentration.

Original language	English
Article number	6088006
Pages (from-to)	408-413
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	2
DOIs	https://doi.org/10.1109/TED.2011.2174641
Publication status	Published - Feb 2012

Keywords

Avalanche energy
power MOSFET
silicon-oxide-nitride-oxide-silicon (SONOS)
unclamped inductive switching (UIS)

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10.1109/TED.2011.2174641

Cite this

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title = "UIS analysis and characterization of the SONOS gate power MOSFET",

abstract = "In this paper, unclamped inductive switching (UIS) performance of the novel silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) is analyzed. The avalanche energy absorption of the SG-MOSFET at UIS is 5.2 times that of the conventional power MOSFET. Analysis shows that the improvement is due to the heavily doped p-body used in the device. Moreover, the influence of the structural parameters on the UIS performance of the device is experimentally characterized. Measurement results show that the UIS performance is not sensitive to the p + contact width and slightly degrades with a larger gate length. Furthermore, the results show that it is promising to further improve the UIS performance of the device by using a more efficient charge trapping material in the gate dielectric to allow further increase in the p-body doping concentration.",

keywords = "Avalanche energy, power MOSFET, silicon-oxide-nitride-oxide-silicon (SONOS), unclamped inductive switching (UIS)",

author = "Xianda Zhou and Ng, \{Jacky C.W.\} and Sin, \{Johnny K.O.\}",

year = "2012",

month = feb,

doi = "10.1109/TED.2011.2174641",

language = "English",

volume = "59",

pages = "408--413",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - UIS analysis and characterization of the SONOS gate power MOSFET

AU - Zhou, Xianda

AU - Ng, Jacky C.W.

AU - Sin, Johnny K.O.

PY - 2012/2

Y1 - 2012/2

N2 - In this paper, unclamped inductive switching (UIS) performance of the novel silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) is analyzed. The avalanche energy absorption of the SG-MOSFET at UIS is 5.2 times that of the conventional power MOSFET. Analysis shows that the improvement is due to the heavily doped p-body used in the device. Moreover, the influence of the structural parameters on the UIS performance of the device is experimentally characterized. Measurement results show that the UIS performance is not sensitive to the p + contact width and slightly degrades with a larger gate length. Furthermore, the results show that it is promising to further improve the UIS performance of the device by using a more efficient charge trapping material in the gate dielectric to allow further increase in the p-body doping concentration.

AB - In this paper, unclamped inductive switching (UIS) performance of the novel silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) is analyzed. The avalanche energy absorption of the SG-MOSFET at UIS is 5.2 times that of the conventional power MOSFET. Analysis shows that the improvement is due to the heavily doped p-body used in the device. Moreover, the influence of the structural parameters on the UIS performance of the device is experimentally characterized. Measurement results show that the UIS performance is not sensitive to the p + contact width and slightly degrades with a larger gate length. Furthermore, the results show that it is promising to further improve the UIS performance of the device by using a more efficient charge trapping material in the gate dielectric to allow further increase in the p-body doping concentration.

KW - Avalanche energy

KW - power MOSFET

KW - silicon-oxide-nitride-oxide-silicon (SONOS)

KW - unclamped inductive switching (UIS)

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000299430200020

UR - https://openalex.org/W2060867120

UR - https://www.scopus.com/pages/publications/84856245478

U2 - 10.1109/TED.2011.2174641

DO - 10.1109/TED.2011.2174641

M3 - Journal Article

SN - 0018-9383

VL - 59

SP - 408

EP - 413

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

M1 - 6088006

ER -

UIS analysis and characterization of the SONOS gate power MOSFET

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Keywords

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