ULSI-Quality Gate Oxide on Thin-Film-Silicon-On-Insulator

W. M. Huang; Z. J. Ma; M. Racanelli; D. Hughes; S. Ajuria; G. Huffman; T. P. Ong; P. K. Ko; C. Hu; B. Y. Hwang

ULSI-Quality Gate Oxide on Thin-Film-Silicon-On-Insulator

W. M. Huang, Z. J. Ma^*, M. Racanelli, D. Hughes, S. Ajuria, G. Huffman, T. P. Ong, P. K. Ko^*, C. Hu^*, B. Y. Hwang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

2 Citations (Scopus)

Abstract

Gate oxide quality for sub-0.5um applications on 7hin-,Film-5ilicon-On-/nsulator (TFSOI) substrates is described. Intrinsic thermal oxide properties such as I-V, QBD and charge trapping rates, as well as device effective mobilities, of TFSOI are comparable to bulk. However, increased surface micro-roughness on SOI materials leads to a higher thermal oxide defect density relative to that of bulk silicon. The use of wafer polish or stacked thermal/LPCVD oxide is found to be effective in achieving bulk-quality oxide defect densities on TFSOI while maintaining intrinsic I-V, QBD and charge trapping properties.

Original language	English
Pages (from-to)	735-738
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1993
Externally published	Yes
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: 5 Dec 1993 → 8 Dec 1993

Bibliographical note

Publisher Copyright:
© 1993 IEEE

Cite this

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title = "ULSI-Quality Gate Oxide on Thin-Film-Silicon-On-Insulator",

abstract = "Gate oxide quality for sub-0.5um applications on 7hin-,Film-5ilicon-On-/nsulator (TFSOI) substrates is described. Intrinsic thermal oxide properties such as I-V, QBD and charge trapping rates, as well as device effective mobilities, of TFSOI are comparable to bulk. However, increased surface micro-roughness on SOI materials leads to a higher thermal oxide defect density relative to that of bulk silicon. The use of wafer polish or stacked thermal/LPCVD oxide is found to be effective in achieving bulk-quality oxide defect densities on TFSOI while maintaining intrinsic I-V, QBD and charge trapping properties.",

author = "Huang, \{W. M.\} and Ma, \{Z. J.\} and M. Racanelli and D. Hughes and S. Ajuria and G. Huffman and Ong, \{T. P.\} and Ko, \{P. K.\} and C. Hu and Hwang, \{B. Y.\}",

note = "Publisher Copyright: {\textcopyright} 1993 IEEE; Proceedings of the 1993 IEEE International Electron Devices Meeting ; Conference date: 05-12-1993 Through 08-12-1993",

year = "1993",

language = "English",

pages = "735--738",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - ULSI-Quality Gate Oxide on Thin-Film-Silicon-On-Insulator

AU - Huang, W. M.

AU - Ma, Z. J.

AU - Racanelli, M.

AU - Hughes, D.

AU - Ajuria, S.

AU - Huffman, G.

AU - Ong, T. P.

AU - Ko, P. K.

AU - Hu, C.

AU - Hwang, B. Y.

PY - 1993

Y1 - 1993

N2 - Gate oxide quality for sub-0.5um applications on 7hin-,Film-5ilicon-On-/nsulator (TFSOI) substrates is described. Intrinsic thermal oxide properties such as I-V, QBD and charge trapping rates, as well as device effective mobilities, of TFSOI are comparable to bulk. However, increased surface micro-roughness on SOI materials leads to a higher thermal oxide defect density relative to that of bulk silicon. The use of wafer polish or stacked thermal/LPCVD oxide is found to be effective in achieving bulk-quality oxide defect densities on TFSOI while maintaining intrinsic I-V, QBD and charge trapping properties.

AB - Gate oxide quality for sub-0.5um applications on 7hin-,Film-5ilicon-On-/nsulator (TFSOI) substrates is described. Intrinsic thermal oxide properties such as I-V, QBD and charge trapping rates, as well as device effective mobilities, of TFSOI are comparable to bulk. However, increased surface micro-roughness on SOI materials leads to a higher thermal oxide defect density relative to that of bulk silicon. The use of wafer polish or stacked thermal/LPCVD oxide is found to be effective in achieving bulk-quality oxide defect densities on TFSOI while maintaining intrinsic I-V, QBD and charge trapping properties.

UR - https://www.scopus.com/pages/publications/0027814768

M3 - Conference article published in journal

AN - SCOPUS:0027814768

SN - 0163-1918

SP - 735

EP - 738

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting

Y2 - 5 December 1993 through 8 December 1993

ER -

ULSI-Quality Gate Oxide on Thin-Film-Silicon-On-Insulator

Abstract

Bibliographical note

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