Ultra-low voltage organic light-emitting diodes based on PiN structures

Jingsong Huang; Martin Pfeiffer; Ansgar Werner; Jan Blochwitz; Karl Leo; Shiyong Liu

doi:10.1117/12.470443

Ultra-low voltage organic light-emitting diodes based on PiN structures

Jingsong Huang
, Martin Pfeiffer
, Ansgar Werner
, Jan Blochwitz
, Karl Leo
, Shiyong Liu

Research output: Contribution to journal › Journal Article › peer-review

Abstract

We demonstrate an efficient organic electroluminescent devices with p-i-n structure. An amorphous starburst, 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyanoquinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1, 10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achived in the performances of device based on pure 8-tris-hydroxyquinoline as an emitter: 100cd/m² at 2.52V, 1,000cd/m² at 2.9V and the maximum luminance and efficiency reache 66,000cd/m² and 5.25 cd/A, respectively. The efficiency can be kept above 3cd/A in a very large luminance region from 100 to 55,000cd/m².

Original language	English
Pages (from-to)	97-101
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4642
DOIs	https://doi.org/10.1117/12.470443
Publication status	Published - 2002
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Controlled doping
Low operating voltage
Organic electroluminescence

Access to Document

10.1117/12.470443

Cite this

@article{95c84cbb44424c9e8ab90c4df51663c2,

title = "Ultra-low voltage organic light-emitting diodes based on PiN structures",

abstract = "We demonstrate an efficient organic electroluminescent devices with p-i-n structure. An amorphous starburst, 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyanoquinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1, 10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achived in the performances of device based on pure 8-tris-hydroxyquinoline as an emitter: 100cd/m2 at 2.52V, 1,000cd/m2 at 2.9V and the maximum luminance and efficiency reache 66,000cd/m2 and 5.25 cd/A, respectively. The efficiency can be kept above 3cd/A in a very large luminance region from 100 to 55,000cd/m2.",

keywords = "Controlled doping, Low operating voltage, Organic electroluminescence",

author = "Jingsong Huang and Martin Pfeiffer and Ansgar Werner and Jan Blochwitz and Karl Leo and Shiyong Liu",

year = "2002",

doi = "10.1117/12.470443",

language = "English",

volume = "4642",

pages = "97--101",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Ultra-low voltage organic light-emitting diodes based on PiN structures

AU - Huang, Jingsong

AU - Pfeiffer, Martin

AU - Werner, Ansgar

AU - Blochwitz, Jan

AU - Leo, Karl

AU - Liu, Shiyong

PY - 2002

Y1 - 2002

N2 - We demonstrate an efficient organic electroluminescent devices with p-i-n structure. An amorphous starburst, 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyanoquinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1, 10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achived in the performances of device based on pure 8-tris-hydroxyquinoline as an emitter: 100cd/m2 at 2.52V, 1,000cd/m2 at 2.9V and the maximum luminance and efficiency reache 66,000cd/m2 and 5.25 cd/A, respectively. The efficiency can be kept above 3cd/A in a very large luminance region from 100 to 55,000cd/m2.

AB - We demonstrate an efficient organic electroluminescent devices with p-i-n structure. An amorphous starburst, 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyanoquinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1, 10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achived in the performances of device based on pure 8-tris-hydroxyquinoline as an emitter: 100cd/m2 at 2.52V, 1,000cd/m2 at 2.9V and the maximum luminance and efficiency reache 66,000cd/m2 and 5.25 cd/A, respectively. The efficiency can be kept above 3cd/A in a very large luminance region from 100 to 55,000cd/m2.

KW - Controlled doping

KW - Low operating voltage

KW - Organic electroluminescence

UR - https://openalex.org/W2008997532

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000177444000012

U2 - 10.1117/12.470443

DO - 10.1117/12.470443

M3 - Journal Article

SN - 0277-786X

VL - 4642

SP - 97

EP - 101

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Ultra-low voltage organic light-emitting diodes based on PiN structures

Abstract

UN SDGs

Keywords

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