Ultra-steep-slope transistor enabled by an atomic memristive switch

Bojun Cheng; Alexandros Emboras; Elias Passerini; Mila Lewerenz; Marco Eppenberger; Samuel Zumtaugwald; Fabian Ducry; Jan Aeschlimann; Sandip Tiwari; Mathieu Luisier; Juerg Leuthold

Ultra-steep-slope transistor enabled by an atomic memristive switch

Bojun Cheng, Alexandros Emboras, Elias Passerini, Mila Lewerenz, Marco Eppenberger, Samuel Zumtaugwald, Fabian Ducry, Jan Aeschlimann, Sandip Tiwari, Mathieu Luisier, Juerg Leuthold

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

An ultra-compact 3D memristive atomic switch is co-integrated with a field-effect transistor (FET). The combined devices outperform similar state-of-the-art arrangements. The integrated transistor operates with an extremely sharp switching slope of below 3 mV/dec, low leakage below pA and a high current on/off ratio Ion/Ioff < 106. Moreover, our atomic switch features a < 10 ns switching and a < 300 mV operating voltage. Most importantly, the atomic switch has a small footprint of < 10 nm by 10 nm in line with the extreme feature size of the current FET technologies. Thus, this design could addresses the future needs of integrated circuits (ICs) for high integration density at low power consumption.

Original language	English
Title of host publication	Nanoengineering
Subtitle of host publication	Fabrication, Properties, Optics, Thin Films, and Devices XVII
Editors	Balaji Panchapakesan, Andre-Jean Attias, Wounjhang Park
Publisher	SPIE
ISBN (Electronic)	9781510637405
Publication status	Published - 2020
Externally published	Yes
Event	Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII 2020 - Virtual, Online, United States Duration: 24 Aug 2020 → 4 Sept 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11467
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII 2020
Country/Territory	United States
City	Virtual, Online
Period	24/08/20 → 4/09/20

Bibliographical note

Publisher Copyright:
© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

Keywords

field effect transistor
low-power electronics
memristor
resistive switching
steep slope
sub threshold
very large scale integration

Access to Document

https://hdl.handle.net/1783.1/121858

Cite this

Cheng, B., Emboras, A., Passerini, E., Lewerenz, M., Eppenberger, M., Zumtaugwald, S., Ducry, F., Aeschlimann, J., Tiwari, S., Luisier, M., & Leuthold, J. (2020). Ultra-steep-slope transistor enabled by an atomic memristive switch. In B. Panchapakesan, A.-J. Attias, & W. Park (Eds.), Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII Article 114672I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11467). SPIE. https://hdl.handle.net/1783.1/121858

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title = "Ultra-steep-slope transistor enabled by an atomic memristive switch",

abstract = "An ultra-compact 3D memristive atomic switch is co-integrated with a field-effect transistor (FET). The combined devices outperform similar state-of-the-art arrangements. The integrated transistor operates with an extremely sharp switching slope of below 3 mV/dec, low leakage below pA and a high current on/off ratio Ion/Ioff < 106. Moreover, our atomic switch features a < 10 ns switching and a < 300 mV operating voltage. Most importantly, the atomic switch has a small footprint of < 10 nm by 10 nm in line with the extreme feature size of the current FET technologies. Thus, this design could addresses the future needs of integrated circuits (ICs) for high integration density at low power consumption.",

keywords = "field effect transistor, low-power electronics, memristor, resistive switching, steep slope, sub threshold, very large scale integration",

author = "Bojun Cheng and Alexandros Emboras and Elias Passerini and Mila Lewerenz and Marco Eppenberger and Samuel Zumtaugwald and Fabian Ducry and Jan Aeschlimann and Sandip Tiwari and Mathieu Luisier and Juerg Leuthold",

note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII 2020 ; Conference date: 24-08-2020 Through 04-09-2020",

year = "2020",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

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Cheng, B, Emboras, A, Passerini, E, Lewerenz, M, Eppenberger, M, Zumtaugwald, S, Ducry, F, Aeschlimann, J, Tiwari, S, Luisier, M & Leuthold, J 2020, Ultra-steep-slope transistor enabled by an atomic memristive switch. in B Panchapakesan, A-J Attias & W Park (eds), Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII., 114672I, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11467, SPIE, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII 2020, Virtual, Online, United States, 24/08/20. <https://hdl.handle.net/1783.1/121858>

Ultra-steep-slope transistor enabled by an atomic memristive switch. / Cheng, Bojun; Emboras, Alexandros; Passerini, Elias et al.
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII. ed. / Balaji Panchapakesan; Andre-Jean Attias; Wounjhang Park. SPIE, 2020. 114672I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11467).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Ultra-steep-slope transistor enabled by an atomic memristive switch

AU - Cheng, Bojun

AU - Emboras, Alexandros

AU - Passerini, Elias

AU - Lewerenz, Mila

AU - Eppenberger, Marco

AU - Zumtaugwald, Samuel

AU - Ducry, Fabian

AU - Aeschlimann, Jan

AU - Tiwari, Sandip

AU - Luisier, Mathieu

AU - Leuthold, Juerg

N1 - Publisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

PY - 2020

Y1 - 2020

N2 - An ultra-compact 3D memristive atomic switch is co-integrated with a field-effect transistor (FET). The combined devices outperform similar state-of-the-art arrangements. The integrated transistor operates with an extremely sharp switching slope of below 3 mV/dec, low leakage below pA and a high current on/off ratio Ion/Ioff < 106. Moreover, our atomic switch features a < 10 ns switching and a < 300 mV operating voltage. Most importantly, the atomic switch has a small footprint of < 10 nm by 10 nm in line with the extreme feature size of the current FET technologies. Thus, this design could addresses the future needs of integrated circuits (ICs) for high integration density at low power consumption.

AB - An ultra-compact 3D memristive atomic switch is co-integrated with a field-effect transistor (FET). The combined devices outperform similar state-of-the-art arrangements. The integrated transistor operates with an extremely sharp switching slope of below 3 mV/dec, low leakage below pA and a high current on/off ratio Ion/Ioff < 106. Moreover, our atomic switch features a < 10 ns switching and a < 300 mV operating voltage. Most importantly, the atomic switch has a small footprint of < 10 nm by 10 nm in line with the extreme feature size of the current FET technologies. Thus, this design could addresses the future needs of integrated circuits (ICs) for high integration density at low power consumption.

KW - field effect transistor

KW - low-power electronics

KW - memristor

KW - resistive switching

KW - steep slope

KW - sub threshold

KW - very large scale integration

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BT - Nanoengineering

A2 - Panchapakesan, Balaji

A2 - Attias, Andre-Jean

A2 - Park, Wounjhang

PB - SPIE

T2 - Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII 2020

Y2 - 24 August 2020 through 4 September 2020

ER -

Cheng B, Emboras A, Passerini E, Lewerenz M, Eppenberger M, Zumtaugwald S et al. Ultra-steep-slope transistor enabled by an atomic memristive switch. In Panchapakesan B, Attias AJ, Park W, editors, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII. SPIE. 2020. 114672I. (Proceedings of SPIE - The International Society for Optical Engineering).

Ultra-steep-slope transistor enabled by an atomic memristive switch

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Bibliographical note

Keywords

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