TY - JOUR
T1 - Ultra temperature-stable bulk-acoustic-wave resonators with SiO 2 compensation layer
AU - Yu, Hongyu
AU - Pang, Wei
AU - Zhang, Hao
AU - Kim, Eun Sok
PY - 2007/10
Y1 - 2007/10
N2 - This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.
AB - This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000250278400023
UR - https://openalex.org/W2166078888
UR - https://www.scopus.com/pages/publications/37149003145
U2 - 10.1109/TUFFC.2007.505
DO - 10.1109/TUFFC.2007.505
M3 - Journal Article
SN - 0885-3010
VL - 54
SP - 2102
EP - 2109
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 10
ER -