Ultra temperature-stable bulk-acoustic-wave resonators with SiO 2 compensation layer

Hongyu Yu; Wei Pang; Hao Zhang; Eun Sok Kim

doi:10.1109/TUFFC.2007.505

Ultra temperature-stable bulk-acoustic-wave resonators with SiO ₂ compensation layer

Hongyu Yu^*
, Wei Pang
, Hao Zhang
, Eun Sok Kim

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

47 Citations (Scopus)

Abstract

This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO ₂ on a surface micromachined cantilever that is released by XeF ₂ vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO ₂/Si/SiO ₂ supporting substrate.

Original language	English
Pages (from-to)	2102-2109
Number of pages	8
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	54
Issue number	10
DOIs	https://doi.org/10.1109/TUFFC.2007.505
Publication status	Published - Oct 2007
Externally published	Yes

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10.1109/TUFFC.2007.505

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@article{971b729e25084849856c389388cb947c,

title = "Ultra temperature-stable bulk-acoustic-wave resonators with SiO 2 compensation layer",

abstract = "This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.",

author = "Hongyu Yu and Wei Pang and Hao Zhang and Kim, \{Eun Sok\}",

year = "2007",

month = oct,

doi = "10.1109/TUFFC.2007.505",

language = "English",

volume = "54",

pages = "2102--2109",

journal = "IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control",

issn = "0885-3010",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Ultra temperature-stable bulk-acoustic-wave resonators with SiO 2 compensation layer

AU - Yu, Hongyu

AU - Pang, Wei

AU - Zhang, Hao

AU - Kim, Eun Sok

PY - 2007/10

Y1 - 2007/10

N2 - This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.

AB - This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000250278400023

UR - https://openalex.org/W2166078888

U2 - 10.1109/TUFFC.2007.505

DO - 10.1109/TUFFC.2007.505

M3 - Journal Article

SN - 0885-3010

VL - 54

SP - 2102

EP - 2109

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

IS - 10

ER -

Ultra temperature-stable bulk-acoustic-wave resonators with SiO ₂ compensation layer

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