Ultraviolet to Near-Infrared Broadband Phototransistors Based on Hybrid InGaZnO/C8-BTBT Heterojunction Structure

Meng Zhang; Jinxuan Wu; Haotao Lin; Xianjun Zhang; Jian Long Xu; Yan Yan; Sui Dong Wang; Man Wong; Hoi Sing Kwok

doi:10.1109/LED.2021.3077894

Ultraviolet to Near-Infrared Broadband Phototransistors Based on Hybrid InGaZnO/C8-BTBT Heterojunction Structure

Meng Zhang, Jinxuan Wu, Haotao Lin, Xianjun Zhang, Jian Long Xu, Yan Yan^*, Sui Dong Wang, Man Wong, Hoi Sing Kwok

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

14 Citations (Scopus)

Abstract

In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (1014 - 1015 jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.

Original language	English
Article number	9424628
Pages (from-to)	998-1001
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	7
DOIs	https://doi.org/10.1109/LED.2021.3077894
Publication status	Published - Jul 2021

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Photodetectors
broadband
heterojunction
phototransistors
transistors

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10.1109/LED.2021.3077894

Cite this

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title = "Ultraviolet to Near-Infrared Broadband Phototransistors Based on Hybrid InGaZnO/C8-BTBT Heterojunction Structure",

abstract = "In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (1014 - 1015 jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.",

keywords = "Photodetectors, broadband, heterojunction, phototransistors, transistors",

author = "Meng Zhang and Jinxuan Wu and Haotao Lin and Xianjun Zhang and Xu, \{Jian Long\} and Yan Yan and Wang, \{Sui Dong\} and Man Wong and Kwok, \{Hoi Sing\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2021",

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AU - Zhang, Meng

AU - Wu, Jinxuan

AU - Lin, Haotao

AU - Zhang, Xianjun

AU - Xu, Jian Long

AU - Yan, Yan

AU - Wang, Sui Dong

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2021/7

Y1 - 2021/7

N2 - In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (1014 - 1015 jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.

AB - In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (1014 - 1015 jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.

KW - Photodetectors

KW - broadband

KW - heterojunction

KW - phototransistors

KW - transistors

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DO - 10.1109/LED.2021.3077894

M3 - Journal Article

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VL - 42

SP - 998

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

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ER -

Ultraviolet to Near-Infrared Broadband Phototransistors Based on Hybrid InGaZnO/C8-BTBT Heterojunction Structure

Abstract

Bibliographical note

Keywords

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