Unity quantum efficiency photodiode using porous silicon film

J. P. Zheng; K. L. Jiao; W. P. Shen; W. A. Anderson; H. S. Kwok

Unity quantum efficiency photodiode using porous silicon film

J. P. Zheng^*, K. L. Jiao, W. P. Shen, W. A. Anderson, H. S. Kwok

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

3 Citations (Scopus)

Abstract

A highly sensitive photodiode was fabricated with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630 to 900 nm without any anti-reflective coating. The detector response time is about 2 ns for a 9 volts reverse bias. The acceptance angle of photodiode is 2 times better than that of conventional Si detectors. The uniformity and stability were also studied. Possible mechanisms are discussed.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	371-375
Number of pages	5
ISBN (Print)	1558991786
Publication status	Published - 1993
Externally published	Yes
Event	Proceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA Duration: 30 Nov 1992 → 4 Dec 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	283
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the Second Symposium on Dynamics in Small Confining Systems
City	Boston, MA, USA
Period	30/11/92 → 4/12/92

Cite this

@inproceedings{8c4b153852024c46b933d16a3f8f545a,

title = "Unity quantum efficiency photodiode using porous silicon film",

abstract = "A highly sensitive photodiode was fabricated with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630 to 900 nm without any anti-reflective coating. The detector response time is about 2 ns for a 9 volts reverse bias. The acceptance angle of photodiode is 2 times better than that of conventional Si detectors. The uniformity and stability were also studied. Possible mechanisms are discussed.",

author = "Zheng, \{J. P.\} and Jiao, \{K. L.\} and Shen, \{W. P.\} and Anderson, \{W. A.\} and Kwok, \{H. S.\}",

year = "1993",

language = "English",

isbn = "1558991786",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "371--375",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Second Symposium on Dynamics in Small Confining Systems ; Conference date: 30-11-1992 Through 04-12-1992",

}

Zheng, JP, Jiao, KL, Shen, WP, Anderson, WA & Kwok, HS 1993, Unity quantum efficiency photodiode using porous silicon film. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 283, Publ by Materials Research Society, pp. 371-375, Proceedings of the Second Symposium on Dynamics in Small Confining Systems, Boston, MA, USA, 30/11/92.

Unity quantum efficiency photodiode using porous silicon film. / Zheng, J. P.; Jiao, K. L.; Shen, W. P. et al.
Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 371-375 (Materials Research Society Symposium Proceedings; Vol. 283).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Unity quantum efficiency photodiode using porous silicon film

AU - Zheng, J. P.

AU - Jiao, K. L.

AU - Shen, W. P.

AU - Anderson, W. A.

AU - Kwok, H. S.

PY - 1993

Y1 - 1993

N2 - A highly sensitive photodiode was fabricated with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630 to 900 nm without any anti-reflective coating. The detector response time is about 2 ns for a 9 volts reverse bias. The acceptance angle of photodiode is 2 times better than that of conventional Si detectors. The uniformity and stability were also studied. Possible mechanisms are discussed.

AB - A highly sensitive photodiode was fabricated with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630 to 900 nm without any anti-reflective coating. The detector response time is about 2 ns for a 9 volts reverse bias. The acceptance angle of photodiode is 2 times better than that of conventional Si detectors. The uniformity and stability were also studied. Possible mechanisms are discussed.

UR - https://www.scopus.com/pages/publications/0027150016

M3 - Conference Paper published in a book

AN - SCOPUS:0027150016

SN - 1558991786

T3 - Materials Research Society Symposium Proceedings

SP - 371

EP - 375

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Proceedings of the Second Symposium on Dynamics in Small Confining Systems

Y2 - 30 November 1992 through 4 December 1992

ER -

Unity quantum efficiency photodiode using porous silicon film

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