Variability-aware 7T SRAM circuit with low leakage high data stability SLEEP mode

The design of nanoscale static random access memory (SRAM) circuits becomes increasingly challenging due to the degraded data stability, weaker write ability, increased leakage power consumption, and exacerbated process parameter variations in each new CMOS technology generation. A new asymmetrically ground-gated seven-transistor (7T) SRAM circuit is proposed for providing a low leakage high data stability SLEEP mode in this paper. With the proposed asymmetrical 7T SRAM cell, the data stability is enhanced by up to 7.03x and 2.32x during read operations and idle status, respectively, as compared to the conventional six-transistor (6T) SRAM cells in a 65 nm CMOS technology. A specialized write assist circuitry is proposed to facilitate the data transfer into the new 7T SRAM cells. The overall electrical quality of a 128-bit×64-bit memory array is enhanced by up to 74.44x and 13.72% with the proposed asymmetrical 7T SRAM cells as compared to conventional 6T and 8T SRAM cells, respectively. Furthermore, the new 7T SRAM cell displays higher data stability as compared to the conventional 6T SRAM cells and wider write voltage margin as compared to the conventional 8T SRAM cells under the influence of both die-to-die and within-die process parameter fluctuations.