Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

Xuemei Yin; Sunbin Deng; Guoyuan Li; Wei Zhong; Rongsheng Chen; Man Wong; Hoi Sing Kwok

doi:10.1109/EDSSC.2018.8487064

Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

Xuemei Yin, Sunbin Deng, Guoyuan Li, Wei Zhong, Rongsheng Chen, Man Wong, Hoi Sing Kwok

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

3 Citations (Scopus)

Abstract

Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (I_on/I_off) as high as 3.7 × 10 7 while V_ds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.

Original language	English
Title of host publication	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538662342
DOIs	https://doi.org/10.1109/EDSSC.2018.8487064
Publication status	Published - 9 Oct 2018
Event	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 - Shenzhen, China Duration: 6 Jun 2018 → 8 Jun 2018

Publication series

Name	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Conference

Conference	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Country/Territory	China
City	Shenzhen
Period	6/06/18 → 8/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

ITO-stabilized ZnO
Thin film transistor
vertical channel

Access to Document

10.1109/EDSSC.2018.8487064

Cite this

Yin, X., Deng, S., Li, G., Zhong, W., Chen, R., Wong, M., & Kwok, H. S. (2018). Vertical Channel ITO-stabilized ZnO Thin-Film Transistors. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 Article 8487064 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2018.8487064

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title = "Vertical Channel ITO-stabilized ZnO Thin-Film Transistors",

abstract = "Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as 3.7 × 10 7 while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.",

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author = "Xuemei Yin and Sunbin Deng and Guoyuan Li and Wei Zhong and Rongsheng Chen and Man Wong and Kwok, \{Hoi Sing\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 ; Conference date: 06-06-2018 Through 08-06-2018",

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doi = "10.1109/EDSSC.2018.8487064",

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Yin, X, Deng, S, Li, G, Zhong, W, Chen, R, Wong, M & Kwok, HS 2018, Vertical Channel ITO-stabilized ZnO Thin-Film Transistors. in 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018., 8487064, 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Shenzhen, China, 6/06/18. https://doi.org/10.1109/EDSSC.2018.8487064

Vertical Channel ITO-stabilized ZnO Thin-Film Transistors. / Yin, Xuemei; Deng, Sunbin; Li, Guoyuan et al.
2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8487064 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

AU - Yin, Xuemei

AU - Deng, Sunbin

AU - Li, Guoyuan

AU - Zhong, Wei

AU - Chen, Rongsheng

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as 3.7 × 10 7 while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.

AB - Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as 3.7 × 10 7 while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.

KW - ITO-stabilized ZnO

KW - Thin film transistor

KW - vertical channel

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U2 - 10.1109/EDSSC.2018.8487064

DO - 10.1109/EDSSC.2018.8487064

M3 - Conference Paper published in a book

T3 - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

BT - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 6 June 2018 through 8 June 2018

ER -

Yin X, Deng S, Li G, Zhong W, Chen R, Wong M et al. Vertical Channel ITO-stabilized ZnO Thin-Film Transistors. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8487064. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). doi: 10.1109/EDSSC.2018.8487064

Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

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Keywords

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