Vertical Ga2O3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation

Tatsuro Watahiki; Mikio Yamamuka; Yohei Yuda; Masataka Higashiwaki; Chia-Hung Lin; Man Hoi Wong; Keita Konishi; Yoshinao Kumagai; Sato Mayuko; Hisashi Murakami; Nao Takekawa

Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation

Tatsuro Watahiki, Mikio Yamamuka, Yohei Yuda, Masataka Higashiwaki, Chia-Hung Lin, Man Hoi Wong, Keita Konishi, Yoshinao Kumagai, Sato Mayuko, Hisashi Murakami, Nao Takekawa

Research output: Contribution to conference › Conference Paper › peer-review

Original language	English
Publication status	Published - 2019
Externally published	Yes
Event	46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019) - Duration: 1 Jan 2019 → 1 Jan 2019

Conference

Conference	46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019)
Period	1/01/19 → 1/01/19

Access to Document

https://hdl.handle.net/1783.1/120843

Cite this

Watahiki, T., Yamamuka, M., Yuda, Y., Higashiwaki, M., Lin, C.-H., Wong, M. H., Konishi, K., Kumagai, Y., Mayuko, S., Murakami, H., & Takekawa, N. (2019). Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation. Paper presented at 46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019). https://hdl.handle.net/1783.1/120843

@conference{583fe33a693a48ebb3849eb9f3c02f0e,

title = "Vertical Ga2O3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation",

author = "Tatsuro Watahiki and Mikio Yamamuka and Yohei Yuda and Masataka Higashiwaki and Chia-Hung Lin and Wong, \{Man Hoi\} and Keita Konishi and Yoshinao Kumagai and Sato Mayuko and Hisashi Murakami and Nao Takekawa",

year = "2019",

language = "English",

note = "46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019) ; Conference date: 01-01-2019 Through 01-01-2019",

}

Watahiki, T, Yamamuka, M, Yuda, Y, Higashiwaki, M, Lin, C-H, Wong, MH, Konishi, K, Kumagai, Y, Mayuko, S, Murakami, H & Takekawa, N 2019, 'Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation', Paper presented at 46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019), 1/01/19 - 1/01/19. <https://hdl.handle.net/1783.1/120843>

Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation. / Watahiki, Tatsuro; Yamamuka, Mikio; Yuda, Yohei et al.
2019. Paper presented at 46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019).

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Vertical Ga2O3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation

AU - Watahiki, Tatsuro

AU - Yamamuka, Mikio

AU - Yuda, Yohei

AU - Higashiwaki, Masataka

AU - Lin, Chia-Hung

AU - Wong, Man Hoi

AU - Konishi, Keita

AU - Kumagai, Yoshinao

AU - Mayuko, Sato

AU - Murakami, Hisashi

AU - Takekawa, Nao

PY - 2019

Y1 - 2019

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000539485600042

M3 - Conference Paper

T2 - 46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019)

Y2 - 1 January 2019 through 1 January 2019

ER -

Vertical Ga2O3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation

Conference

Access to Document

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Cite this

Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation