VIA-4 Avalanche-Induced Breakdown Mechanisms in Short-Channel MOSFETs

F. C. Hsu; P. K. Ko; S. Tam; C. Hu; R. S. Muller

doi:10.1109/T-ED.1982.20998

VIA-4 Avalanche-Induced Breakdown Mechanisms in Short-Channel MOSFETs

F. C. Hsu
, P. K. Ko
, S. Tam
, C. Hu
, R. S. Muller

Research output: Contribution to journal › Journal Article › peer-review

Original language	English
Pages (from-to)	1702-1703
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1982.20998
Publication status	Published - Oct 1982
Externally published	Yes

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title = "VIA-4 Avalanche-Induced Breakdown Mechanisms in Short-Channel MOSFETs",

author = "Hsu, \{F. C.\} and Ko, \{P. K.\} and S. Tam and C. Hu and Muller, \{R. S.\}",

year = "1982",

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language = "English",

volume = "29",

pages = "1702--1703",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - VIA-4 Avalanche-Induced Breakdown Mechanisms in Short-Channel MOSFETs

AU - Hsu, F. C.

AU - Ko, P. K.

AU - Tam, S.

AU - Hu, C.

AU - Muller, R. S.

PY - 1982/10

Y1 - 1982/10

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UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1982PS55200096

UR - https://www.scopus.com/pages/publications/84916427277

U2 - 10.1109/T-ED.1982.20998

DO - 10.1109/T-ED.1982.20998

M3 - Journal Article

AN - SCOPUS:84916427277

SN - 0018-9383

VL - 29

SP - 1702

EP - 1703

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

VIA-4 Avalanche-Induced Breakdown Mechanisms in Short-Channel MOSFETs

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