TY - JOUR
T1 - Wafer Temperature Dependence of the Vapor-Phase HF Oxide Etch
AU - Wong, Man
AU - Bowling, Robert A.
PY - 1993/1
Y1 - 1993/1
N2 - When HF/H2O vapor derived from an azeotropic solution of HF/H2O was used to etch various oxides of silicon, the etch rates were found to have qualitatively similar dependence on the wafer temperature. However, the sensitivites of the dependence were found to vary greatly among the different oxides. Consequently, the etch selectivities among different oxides could be controlled by changing the wafer temperature. In particular, the phosphosilicate glass to thermal oxide etch selectivity increased from about 18:1 to at least 2900:1, when the temperature was raised from around 25°C to around 50°C.
AB - When HF/H2O vapor derived from an azeotropic solution of HF/H2O was used to etch various oxides of silicon, the etch rates were found to have qualitatively similar dependence on the wafer temperature. However, the sensitivites of the dependence were found to vary greatly among the different oxides. Consequently, the etch selectivities among different oxides could be controlled by changing the wafer temperature. In particular, the phosphosilicate glass to thermal oxide etch selectivity increased from about 18:1 to at least 2900:1, when the temperature was raised from around 25°C to around 50°C.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1993KF88500042
UR - https://openalex.org/W1973579482
UR - https://www.scopus.com/pages/publications/0027187186
U2 - 10.1149/1.2056088
DO - 10.1149/1.2056088
M3 - Journal Article
SN - 0013-4651
VL - 140
SP - 205
EP - 208
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 1
ER -