Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications

R. P. Shi; X. D. Huang; Johnny K.O. Sin; P. T. Lai

doi:10.1109/LED.2016.2615063

Y-Doped BaTiO₃ as a Charge-Trapping Layer for Nonvolatile Memory Applications

R. P. Shi
, X. D. Huang
, Johnny K.O. Sin
, P. T. Lai

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

The charge-trapping properties of Y-doped BaTiO₃ (Y-BTO) are investigated using an Al/Al₂O₃/Y-BTO/SiO₂/Si structure. Compared with the memory capacitor with pure BaTiO₃, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 10⁴ s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO₂ interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.

Original language	English
Article number	7582372
Pages (from-to)	1555-1558
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/LED.2016.2615063
Publication status	Published - Dec 2016

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

BaTiO
Nonvolatile memory
Y doping
charge-trapping

Access to Document

10.1109/LED.2016.2615063

Cite this

@article{9958f86b43f541be85041efde2ab617f,

title = "Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications",

abstract = "The charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96\% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.",

keywords = "BaTiO, Nonvolatile memory, Y doping, charge-trapping",

author = "Shi, \{R. P.\} and Huang, \{X. D.\} and Sin, \{Johnny K.O.\} and Lai, \{P. T.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = dec,

doi = "10.1109/LED.2016.2615063",

language = "English",

volume = "37",

pages = "1555--1558",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications

AU - Shi, R. P.

AU - Huang, X. D.

AU - Sin, Johnny K.O.

AU - Lai, P. T.

PY - 2016/12

Y1 - 2016/12

N2 - The charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.

AB - The charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.

KW - BaTiO

KW - Nonvolatile memory

KW - Y doping

KW - charge-trapping

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000389332700006

UR - https://openalex.org/W2530983880

U2 - 10.1109/LED.2016.2615063

DO - 10.1109/LED.2016.2615063

M3 - Journal Article

SN - 0741-3106

VL - 37

SP - 1555

EP - 1558

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 7582372

ER -