ZnO nanowires synthesized by vapor trapping CVD method

A chemical vapor deposition (CVD) process modified with vapor trapping method has been used to synthesize n-type ZnO nanowires with high carrier concentration without incorporating impurity dopants. With this method, a spatial variation of synthesis condition was created and the donors were directly introduced into the nanowires during the synthesis process. Electron microscopy and electrical transport studies show that nanowires having distinct morphologies and electrical properties were obtained at different locations in the CVD system. The vapor trapping method elucidates the effect of synthesis conditions, and provides an approach to control nanowire growth for tailorable device applications.